The growth of highly mismatched In x Ga 1-x As (0.28?x?1) on GaAs by molecular-beam epitaxy

Journal

Journal of Applied Physics

Journal Volume

73

Journal Issue

10

Pages

4916-4926

Date Issued

1993

Author(s)

Chang, S.-Z.

Chang, T.-C.

DOI

10.1063/1.353809

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/498796

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-0010697920&doi=10.1063%2f1.353809&partnerID=40&md5=d519c64840c04e05d67597feedce9b60

Type

journal article