Shallow trench isolation-related narrow channel effect on the kink behaviour of 40 nm PD SOI NMOS device
Journal
Solid-State Electronics
Journal Volume
54
Journal Issue
5
Pages
609-611
Date Issued
2010-05
Author(s)
Abstract
This paper reports the shallow trench isolation (STI)-related narrow channel effect (NCE) on the kink behaviour of the 40 nm PD SOI NMOS device. As verified by the experimentally measured data, with a smaller channel width, the onset of the kink effect behaviour occurs at a higher drain voltage and the breakdown voltage is also larger due to the weaker parasitic bipolar device in the floating thin film as a result of a smaller electron recombination lifetime caused by the STI-related defect effect. © 2009 Elsevier Ltd. All rights reserved.
This paper reports the shallow trench isolation (STI)-related narrow channel effect (NCE) on the kink behaviour of the 40 nm PD SOI NMOS device. As verified by the experimentally measured data, with a smaller channel width, the onset of the kink effect behaviour occurs at a higher drain voltage and the breakdown voltage is also larger due to the weaker parasitic bipolar device in the floating thin film as a result of a smaller electron recombination lifetime caused by the STI-related defect effect. © 2009 Elsevier Ltd. All rights reserved.
SDGs
Type
journal article