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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Shallow trench isolation-related narrow channel effect on the kink behaviour of 40 nm PD SOI NMOS device
Details
Shallow trench isolation-related narrow channel effect on the kink behaviour of 40 nm PD SOI NMOS device
Journal
Solid-State Electronics
Journal Volume
54
Journal Issue
5
Pages
609-611
Date Issued
2010-05
Author(s)
H. J. Hung
J. B. kuo
D. Chen
C. T. Tsai
C. S. Yeh
JAMES-B KUO
DOI
10.1016/j.sse.2009.11.001
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/359227
SDGs
[SDGs]SDG14
Type
journal article
