Effect of starting oxide preparation on electrical properties of reoxidized nitrided and N2O-annealed gate oxides
Journal
Japanese Journal of Applied Physics, Part 1: Regular Papers \\& Short Notes \\& Review Papers
Journal Volume
33
Journal Issue
9 A
Pages
5101-5106
Date Issued
1994
Author(s)
Abstract
In this work, the effect of the starting oxides with and without postoxidation annealing on the reoxidized nitrided gate oxides (RNO) and N2O-annealed oxides (NAO) of metal-oxide-semiconductor (MOS) structures is discussed. It is found that both the radiation hardness and the constant-current stress resisitance can be improved if the starting oxides of the RNO and NAO are prepared without postoxidation annealing (i.e., fast pull-out from the furnace after the oxidation is completed). The improvements are related to the excess oxygen existing in the fast- pull-out oxides, which results in higher nitrogen incorporation in the oxide and reduces the strain gradient near the oxide interface. © 1994 IOP Publishing Ltd.
SDGs
Other Subjects
Constant-current stress resistance; MOS structure; N20 annealing; Postoxidation treatment; Radiation hardness; Reoxidized nitrided oxide
Type
journal article