The Electric Characteristic and Measurement of Silicon Nanowire Field Effect Transistor
Date Issued
2006
Date
2006
Author(s)
Chang, Ke-Chih
DOI
en-US
Abstract
The silicon nanowires (SiNWs) with Au nanoparticles as catalyst are grown via vapor-liquid-solid (VLS) mechanism by low pressure chemical vapor deposition (LPCVD). The density of Au nanoparticles as catalyst on the substrate can be controlled by the Au deposition time. The growth windows of un-doped and p-type doped silicon nanowires with different diameters of Au nanoparticles as catalyst are investigated. The electrical connection between silicon nanowire and test pads are deposited by focus ion beam (FIB). Then the I-V characteristics of silicon nanowire field effect transistor are measured. The effects of the silicon nanowire length, width and doping concentration on I-V characteristics of silicon nanowire field effect transistor are also discussed.
Subjects
矽奈米線
場效電晶體
Silicon Nanowire
Field Effect Transistor
VLS
LPCVD
FIB
I-V characteristics
Type
thesis
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