Study on the Reliability of Metal-Oxide-Semiconductor (MOS) Structures with Low Temperature Dielectrics used in Thin-Film Transistors
Date Issued
2007
Date
2007
Author(s)
Wu, Tung-Cung
DOI
en-US
Abstract
TFT- LCD at present already extensive exerted be like mobile on many 3C products, screen, television and so on, and TFT process most used for a- Si: H now. In this thesis, we will discuss Low Temperature Dielectrics device characteristic used in Thin-Film Transistors.
Chapter 1 will direct to TFT make basically introduction, and TFT operation's device characteristic and TFT fabricate flow introduction.
Chapter 2 is MOS capacitance's its basic characteristic do rough introduction, and get interface trap density method.
Chapter 3 chief inquires into experiences session, which is divided low temperature Dielectrics add with voltage bias and anneal two parts. There is divided into first plus positive bias at addition voltage bias' part, or first plus negative bias, or first plus positive bias again then plus negative bias, or first plus negative bias then at addition positive bias on the gate insulator layer. The experience will be discussed under applying voltage bias, charges change in the different situation at low temperature dielectrics. Above certain temperature can back to the initial one.
In the last chapter, conclusion and suggestion for feature work are given.
Subjects
薄膜電晶體
低溫介電質
金氧半結構
可靠度
電容
TFT-LCD
Low Temperature Dielectrics
Metal-Oxide-Semiconductor (MOS) Structures
MOS capacitance
Reliability
Type
thesis
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