Borophene-based materials as emerging platforms for nanoelectronics and optoelectronics
Journal
Cell Reports Physical Science
Journal Volume
7
Journal Issue
4
Start Page
103200
ISSN
2666-3864
Date Issued
2026-04
Author(s)
Yang, Cheng-Hsueh
Chang, Chun-Wei
Chen, Fa-Hua
Hsu, Ji-Song
Lai, Po-Shao
Lin, Wei-Chen
Hang, Da-Ren
Abstract
Borophene, a monolayer of boron atoms, offers unique polymorphism, intrinsic metallicity, and anisotropic transport distinct from graphene and transition metal dichalcogenides. These features enable applications in ultrafast transistors, broadband photodetectors, nonlinear optics, and energy storage. This review highlights recent advances in synthesis, electronic and optical properties, and emerging device applications of borophene. Specifically, we survey nanoelectronic implementations (field-effect transistors, logic circuits, interconnects, flexible electronics, and energy storage systems) as well as optoelectronic applications (broadband photodetection, light emission, nonlinear optics, and photonic modulation). Key challenges, such as air instability, phase control, and integration barriers, are discussed along with strategies including chemical functionalization, encapsulation, and scalable fabrication. Compared with other two-dimensional materials, borophene exhibits exceptional versatility and holds significant potential for next-generation nanoelectronics, optoelectronics, and quantum technologies.
Subjects
borophene
nanoelectronics
nanostructures
photodetectors
transistors
Publisher
Elsevier BV
Type
journal article