Interfacial Reactions between Liquid Indium and Nickel Substrate
Journal
Journal of Electronic Materials
Journal Volume
28
Journal Issue
2
Pages
105-108
Date Issued
1999
Author(s)
Abstract
The morphologies and growth kinetics of intermetallic compounds for the interfacial reaction between liquid In and solid Ni substrate in the temperature range from 225 to 500°C are examined in this study. Experimental results showed that the thickness of intermetallic compounds formed during the Ni(s)/ In(l) interfacial reaction increased with the reaction temperature and the square root of reaction time. The x-ray diffraction pattern revealed the formation of intermetallic compounds Ni10In27 (T<300°C) and Ni2In3 (T>300°C). Moreover, the activation energies for the interdiffusion of Ni and In atoms in the Ni10In27 and Ni2In3 are 94.74 and 33.51 kJ/mol, respectively. Using the Ta thin film as a diffusion mark, the formation mechanism of intermetallic compounds during interfacial reaction was clarified.
Type
journal article