Magnetic tunnel junctions with superlattice barriers
Journal
Journal of Applied Physics
Journal Volume
136
Journal Issue
10
Start Page
103902
ISSN
0021-8979
1089-7550
Date Issued
2024-09-14
Author(s)
DOI
10.1063/5.0228748
Abstract
The urgent demand for high-performance emerging memory, propelled by artificial intelligence in internet of things (AIoT) and machine learning advancements, spotlights spin-transfer torque magnetic random-access memory as a prime candidate for practical application. However, magnetic tunnel junctions (MTJs) with a single-crystalline MgO barrier, which are central to magnetic random-access memory (MRAM), suffer from significant drawbacks: insufficient endurance due to breakdown and high writing power requirements. A superlattice barrier-based MTJ (SL-MTJ) is proposed to overcome the limitation. We first fabricated the MTJ using an SL barrier while examining the magnetoresistance and resistance-area product. Lower writing power can be achieved in SL-MTJs compared to MgO-MTJs. Our study may provide a new route to the development of MRAM technologies.
Publisher
AIP Publishing
Type
journal article