子計畫一：砷銻化鎵第二型量子井的成長與元件技術
Date Issued
2003-10-31
Date
2003-10-31
Author(s)
DOI
912120E002004
Abstract
In this study, GaAsSb/GaAs type-II
quantum wells and laser devices have been
successfully grown and fabricated. The
photoluminescence emission wavelength of
the type-II quantum well reaches 1300m with
a FWHM of 80 meV. On the results of the
type II GaAsSb/GaAs single quantum-well
laser diode, an emission wavelength of
1292nm and a low threshold current density
of 300A/cmP
2
P are demonstrated at room
temperature. The band offset of the type-II
GaAsB0.7BSbB0.3B/GaAs quantum well is also
studied. We propose an extrapolation method
to remove the band-bending effect and
determine the flat-band transition energy of
the type-II quantum well from photoluminescence
(PL) measurement. Then, we
compare the flat-band transition energy of
type-II GaAsB0.7BSbB0.3B/GaAs QW with different
quantum well thickness to extract the
valence-band-offset ratio of the heterostructure.
The obtained valence-band-offset
ratio is 1.32.
Subjects
molecular beam epitaxy
Sb-based compound semiconductor
GaAsSb quantum well
band-lineup
valence band discontinuity
Publisher
臺北市：國立臺灣大學電子工程學研究所
Type
report
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