On the direct insulator-quantum hall transition in two-dimensional electron systems in the vicinity of nanoscaled scatterers
Journal
Nanoscale Research Letters
Journal Volume
6
Journal Issue
1
Date Issued
2011
Author(s)
Lin, L.-H.
Chen, K.Y.
Lo, S.-T.
Wang, Y.-T.
Lou, D.-S.
Kim, G.-H.
Ochiai, Y.
Aoki, N.
Chen, J.-C.
Lin, Y.
Huang, C.F.
Lin, S.-D.
Ritchie, D.A.
Abstract
A direct insulator-quantum Hall (I-QH) transition corresponds to a crossover/transition from the insulating regime to a high Landau level filling factor ν > 2 QH state. Such a transition has been attracting a great deal of both experimental and theoretical interests. In this study, we present three different two-dimensional electron systems (2DESs) which are in the vicinity of nanoscaled scatterers. All these three devices exhibit a direct I-QH transition, and the transport properties under different nanaoscaled scatterers are discussed.
Type
journal article