The Low Temperature a-SiNx Passivation Films and The Uniform Poly-Si Grain Thin Film Transistors with Application to Organic Light Emitting Diode
Date Issued
2005
Date
2005
Author(s)
Chang, Hsu-Yu
DOI
en-US
Abstract
Two important problems concerning the active matrix organic light emitting diode (AMOLED) are considered. The first is the passivation layer to protect the top emitting OLED. The second is to obtain poly-Si thin film transistor with better uniformity and good performance. The a-SiNx film with high optical gap and impermeability fabricated by plasma enhanced chemical vapor deposition (PECVD) has been chosen as the passivation layer. The optimum ratio of reaction gas is SiH4:NH3:N2 = 10:3:197 sccm. The optical gap is higher than 3 eV and reaction temperature could be as low as 70℃ and the film doesn’t show any degradation after removing from the growth chamber for 5000 hours. A new method to prepare uniform and large grain size poly-Si was discovered. The uniformity of the thin film transistor fabricated by excimer laser annealing (ELA) of amorphous Si with metallic (Cr/Al) photonic crystal structure has been substantially improved. The best on/off current ratio could reach 8 order of magnitude and the mobility could attain 354 cm2/V-sec. After comparing the Cr/Al with Al photonic crystal pads, the Cr could efficiently impede the diffusion of Al into Si.
Subjects
氮化矽
多晶矽
薄膜電晶體
silicon nitride
poly Si
thin film transistor
Type
thesis
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