Persistent photoconductivity in SiGe/Si quantum wells
Journal
Journal of Applied Physics
Journal Volume
84
Journal Issue
2
Pages
877-880
Date Issued
1998
Author(s)
Abstract
Persistent photoconductivity (PPC) has been observed in boron-doped Si1-xGex/Si quantum wells. The decay kinetics of the PPC effect can be well described by a stretched-exponential function, Ippc(t)=Ippc(0)exp[-(t/τ) β](0<β<1), which is usually observed in many disorder materials. Through the studies of the PPC effect under various conditions, such as different temperature, different photon energy of photoexcitation, and different Ge content, we identify that the alloy potential fluctuations induced by compositional disorder are the origin of the PPC effect in Si1-xGex/Si quantum wells. © 1998 American Institute of Physics.
SDGs
Type
journal article