Preparation and ferroelectric properties of barium-ion-doped strontium bismuth tantalate thin films
Resource
Journal of Physics and Chemistry of Solids 69 (2-3): 480-484
Journal
Journal of Physics and Chemistry of Solids
Journal Issue
69
Pages
480-484
Date Issued
2008
Date
2008
Author(s)
Chang, Da-Pong
Abstract
(Sr0.5Ba0.5)xBiyTa2Oz (SBBT) films were prepared on Pt/Ti/SiO2/Si substrates by a metal-organic decomposition method. At low temperatures, the phase transformation of films from fluorite-type structure to SBBT structure was suppressed with increasing the amounts of bismuth ions. As temperature increased, the phase transformation was improved by excess bismuth ions. Adding excess bismuth ions also resulted in an increase in the grain size of the prepared films. The value of the remanent polarization of thin film was also increased by adding excess bismuth contents. It was found that the ferroelectric characteristics of these films were significantly affected by the composition in the films. © 2007 Elsevier Ltd. All rights reserved.
(Sr0.5Ba0.5)xBiyTa2Oz (SBBT) films were prepared on Pt/Ti/SiO2/Si substrates by a metal-organic decomposition method. At low temperatures, the phase transformation of films from fluorite-type structure to SBBT structure was suppressed with increasing the amounts of bismuth ions. As temperature increased, the phase transformation was improved by excess bismuth ions. Adding excess bismuth ions also resulted in an increase in the grain size of the prepared films. The value of the remanent polarization of thin film was also increased by adding excess bismuth contents. It was found that the ferroelectric characteristics of these films were significantly affected by the composition in the films. © 2007 Elsevier Ltd. All rights reserved.
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journal article
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