Photoluminescence temperature behavior and Monte Carlo simulation of exciton hopping in InGaN multiple quantum wells
Journal
Physica Status Solidi C: Conferences
Journal Volume
2
Journal Issue
7
Pages
2809-2812
Date Issued
2005
Author(s)
Kazlauskas, K.
Tamulatis, G.
Pobedinskas, P.
?ukauskas, A.
Huang, C.-F.
Cheng, Y.-C.
Wang, H.-C.
Abstract
Application of Monte Carlo simulation of exciton (carrier) hopping for the analysis of the photolumines- cence (PL) temperature behavior in In0.2Ga0.8N/GaN multiple null null is reported. The PL linewidth and peak position measured in the 10-300 K range exhibited a W-shaped and S-shaped temperature be- havior, respectively. The W-shaped linewidth dependence was fitted with the results of Monte Carlo simulation, which involved phonon-assisted exciton hopping through energy states confined in the band potential fluctuation minima. The simulation yielded the values of the standard deviation for potential fluctuations within In-rich regions (31 meV), dispersion of the average exciton energy in different regions (29 meV), and the temperature dependence of the band gap, which was found to be in a fair agreement with the photoreflectance data. Our results, which infer in-plane motion of localized excitons within the wells, are consistent with the model of large In-rich regions (segmented null wells or quantum discs) with band potential fluctuations inside these regions.
SDGs
Type
conference paper