Ultralow-power complementary metal-oxide-semiconductor inverters constructed on schottky barrier modified nanowire metal-oxide-semiconductor field-effect-transistors
Journal
Journal of Nanoscience and Nanotechnology
Journal Volume
10
Journal Issue
10
Pages
6428-6431
Date Issued
2010
Author(s)
Abstract
We show that the threshold voltages of both n- and p-channel metal-oxide-semiconductor field-effect-transistors (MOSFETs) can be lowered to close to zero by adding extra Schottky contacts on top of nanowires (NWs). Novel complementary metal-oxide-semiconductor (CMOS) inverters are constructed on these Schottky barrier modified n- and p-channel NW MOSFETs. Based on the high performances of the modified n- and p-channel MOSFETs, especially the low threshold voltages, the as-fabricated CMOS inverters have low operating voltage, high voltage gain, and ultra-low static power dissipation.
SDGs
Type
journal article