Influences of Random Alloy Fluctuation to the Efficiency of μlED and Optimization of Efficiency with Vertical Type Contact
Journal
Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
Journal Volume
2021-September
Pages
65-66
Date Issued
2021
Author(s)
Ho C.-H
Abstract
μ-LED's efficiency is enormously dependent on the chip size, which is believed to be the influence of sidewall traps. However, the decrease of IQE in AlInGaP based red LED is much stronger than nitride based LEDs. This paper examines the role of random alloy fluctuation with our 2D simulation software for the whole LED chip size to extract the major factors leading to the large IQE discrepancy between nitride-based and AlGaInP based LEDs. The design rule of the vertical LEDs to avoid the sidewall influences of μ-LED will be proposed in the presentation. ? 2021 IEEE.
Subjects
AlInGaP
InGaN
piezoelectric effect
random alloy fluctuation
sidewall effect
μLED
Aluminum alloys
Computer software
Efficiency
Gallium alloys
III-V semiconductors
Indium alloys
Light emitting diodes
MEMS
Nitrides
Semiconductor alloys
Alloy fluctuation
Chip sizes
LED efficiencies
Nitride based LED
Optimisations
Random alloy
Random alloy fluctuation
Sidewall effects
Vertical-type
ΜLED
Piezoelectricity
Type
conference paper