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  4. Synthesis of a 4,9-Didodecyl Angular-Shaped Naphthodiselenophene Building Block to Achieve High-Mobility Transistors
 
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Synthesis of a 4,9-Didodecyl Angular-Shaped Naphthodiselenophene Building Block to Achieve High-Mobility Transistors

Journal
Chemistry of Materials
Journal Volume
28
Journal Issue
14
Pages
5121-5130
Date Issued
2016
Author(s)
Tsai, C.-E.
Yu, R.-H.
Lin, F.-J.
Lai, Y.-Y.
Hsu, J.-Y.
Cheng, S.-W.
Hsu, C.-S.
Cheng, Y.-J.
YU-YING LAI  
DOI
10.1021/acs.chemmater.6b02042
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-84979892928&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/396659
Abstract
A new tetracyclic 4,9-dialkyl angular-shaped naphthodiselenophene (4,9-α-aNDS) was designed and synthesized. The naphthalene core in 4,9-α-aNDS is formed by the DBU-induced 6π-cyclization of an (E)-1,2-bis(3-(tetradec-1-yn-1-yl)selenophen-2-yl)ethene intermediate followed by the second PtCl2-catalyzed benzannulation. This synthetic protocol allows for incorporating two dodecyl groups regiospecifically at 4,9-positions of the resulting α-aNDS. An ordered supramolecular self-assembly formed via noncovalent selenium-selenium interactions with a short contact of 3.5 Å was observed in the single-crystal structure of 4,9-α-aNDS. The distannylated α-aNDS building block was copolymerized with Br-DTFBT and Br-DPP acceptors by Stille cross coupling to form two new donor-acceptor polymers PαNDSDTFBT and PαNDSDPP, respectively. The bottom-gate/top-contact organic field-effect devices using the PαNDSDTFBT and PαNDSDPP semiconductors accomplished superior hole mobility of 3.77 and 2.17 cm2 V-1 s-1, respectively, which are among the highest mobilities reported to date.
Type
journal article

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