a-Si:H/c-Si Heterojunction Solar Cells
Date Issued
2012
Date
2012
Author(s)
Chiou, Ta-Cheng
Abstract
In this thesis, the structure, optical and electrical properties of the hydrogenated amorphous silicon ( a-Si:H ) thin films which is fabricated under 140℃ are investigated first. The hydrogen dilution ratio Xg=0.66 is chosen for proper deposition parameter to fabricate a-Si:H/c-Si heterojunction solar cells. Then (i)a-Si/ (n)a-Si hetrojunction is studied by means of current-voltage characteristics measurement. In order to improve (p)a-Si:H/ (n)c-Si interface, two ways are chosen to achieve this goal. Insert an intrinsic a-Si:H at (p)a-Si:H/ (n)c-Si interface not only reduces the leakage current but also improves fill factor. Besides, implement plasma treatment on c-Si surface also improve a-Si:H/ c-Si interface and the open circuit voltage ( Voc ) is increased to 0.58. Finally, in order to increase short circuit current ( Jsc ), back surface field ( BSF ) structure is introduced by means of adding n+ layer at back side of silicon wafer. The solar cell performance is open circuit voltage ( Voc=0.58V ), short circuit current density ( Jsc=33.2mA/cm2 ), maximum output power ( Pmax=11.45mW/cm2 ), fill factor ( F.F.=0.595 ) and efficiency=11.45%.
Subjects
a-Si
heterojunction
solar cell
Type
thesis
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