Structural and optical properties of 0.98 μm InGaAs/InGaAsP strained-compensated multiple quantum well structures grown by gas-source molecular beam epitaxy
Resource
Journal of Crystal Growth 206 (1-2): 15-22
Journal
Journal of Crystal Growth
Journal Issue
206
Pages
15-22
Date Issued
1999
Date
1999
Author(s)
Abstract
The effects of growth temperature on the structural and optical properties of gas-source molecular beam epitaxy grown 0.98 μm InGaAs/InGaAsP strain-compensated multiple quantum well structures were studied by transmission electron microscopy (TEM), double crystal X-ray diffraction and photoluminescence measurements. It was found that high quality of quantum well structures can be obtained at a lower growth temperature. A higher growth temperature caused an immiscible growth for the InGaAsP alloy from the observation of the TEM images. As a result, the optical and structural quality of the quantum well structure was drastically degraded.
Other Subjects
Crystal structure; Molecular beam epitaxy; Photoluminescence; Semiconducting indium gallium arsenide; Semiconductor growth; Thermal effects; Transmission electron microscopy; X ray diffraction analysis; Gas source molecular beam epitaxy; Growth temperature; Photoluminescence measurement; Semiconductor quantum wells
Type
journal article
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