High temperature InAs infrared detector based on metal-insulator-semiconductor structure
Journal
Electronics Letters
Journal Volume
31
Journal Issue
11
Pages
918-920
Date Issued
1995-05
Date
1995-05
Author(s)
Abstract
The Au/Cr/a-SiNx:H/(n)InAs/GaAs metal-insulator-semiconductor (MIS) capacitor was fabricated as a basic element of charge injection devices using plasma enhanced chemical vapour deposition. The electrical properties of the capacitor were analysed as a function of temperature using high frequency (1MHz) capacitance-voltage measurements. It was demonstrated that the capacitor can still be biased into deep depletion at 180K. When this capacitor is used as an integrated infrared detector in a charge injection device, it exhibits the capacity to detect infrared signals at a temperature of 180K, higher than that of an InSb infrared detector (77 K), and the device can be cooled thermoelectrically. © 1995, IEE. All rights reserved.
Subjects
Indium compounds; Infrared detectors; Metal- semiconductor-metal structures
SDGs
Other Subjects
Annealing; Capacitance measurement; Chemical vapor deposition; Electric properties; Infrared detectors; MIS devices; Molecular beam epitaxy; Plasma applications; Semiconducting indium compounds; Semiconductor growth; Thermal effects; Voltage measurement; Charge injection devices; Integrated infrared detectors; Metal insulator semiconductor capacitor; Plasma enhanced chemical vapor deposition; Capacitors
Type
journal article
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