Near infrared photodetector based on polymer and indium nitride nanorod organic/inorganic hybrids
Resource
Scripta Materialia, 63(6), 653-656
Journal
Scripta Materialia
Journal Volume
63
Journal Issue
6
Pages
653-656
Date Issued
2010
Date
2010
Author(s)
Lai, Wei-Jung
Li, Shao-Sian
Lin, Chih-Cheng
Kuo, Chun-Chiang
Chen, Kuei-Hsien
Abstract
We propose a nanostructured near infrared photodetector based on indium nitride (InN) nanorod/poly(3-hexylthiophene) hybrids. The current-voltage characteristic of the hybrid device demonstrates the typical p-n heterojunction diode behavior, consisting of p-type polymer and n-type InN nanorods. The device shows a photoresponse range of 900-1260 nm under various reverse biases. An external quantum efficiency of 3.4% at 900 nm operated at -10 V reverse bias was obtained, which is comparable with devices based on lead sulfide and lead selenide hybrid systems. © 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
SDGs
Publisher
Elsevier B.V.
Type
journal article
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