Analysis of STI-Induced Mechanical Stress-Related Kink Effects For Nanometer PD SOI CMOS Devices
Date Issued
2008
Date
2008
Author(s)
Lin, Yi-Hsun
Abstract
This thesis reports the STI-induced mechanical stress-related kink effect behaviour of the 40nm PD SOI NMOS device. As verified by the experimentally measured data and the 2D simulation results, the kink effect behaviour in the saturation region occurs at a higher VD for the 40nm PD device with a smaller S/D length of 0.17μm as compared to the one with the S/D length of 1.7μm due to the higher body-source bandgap narrowing effect on the parasitic bipolar device from the higher STI-induced mechanical stress, offset by the impact ionization enhanced by the bandgap narrowing in the high electric field region near the drain.
Subjects
kink
mechanical stress
Type
thesis
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ntu-97-R95943150-1.pdf
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