P-type GaN formed by Mg diffusion using Mg3N2 as the Mg source
Resource
Proceedings of the 25th International Conference on the Physics of Semiconductors Pts I and II, 87, 1501-1502
Journal
Proceedings of the 25th International Conference on the Physics of Semiconductors Pts I and II
Journal Issue
87
Pages
1501-1502
Date Issued
2001
Date
2001
Author(s)
Yen, J.L.
Wen, K.W.
Yang, Y.J.
Lin, C.Y.
Type
conference paper