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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
STI Mechanical-Stress Induced Small-Geometry Effect on Hysteresis Phenomenon of 40nm PD SOI NMOS Device
Details
STI Mechanical-Stress Induced Small-Geometry Effect on Hysteresis Phenomenon of 40nm PD SOI NMOS Device
Journal
IEDMS
Date Issued
2008-11
Author(s)
H. J. Hung
J. I. Lu
J. B. Kuo
G. S. Lin
C. S. Yeh
C. T. Tsai
M. Ma
JAMES-B KUO
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/342567
Type
conference paper