The improved stability of deuterated amorphous silicon thin film transistor
Resource
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Journal
5th International Conference on Solid-State and Integrated Circuit Technology
Pages
-
Date Issued
1998-10
Date
1998-10
Author(s)
Wei, Jeng-Hua
DOI
N/A
Abstract
In order to reduce the bias-induced degradation in hydrogenated amorphous silicon thin film transistors (a-Si:H TFT), a deuterated amorphous silicon layer prepared by deuterium plasma treatment is used as the active layer. It is demonstrated that the stability, i.e., the shifts of threshold voltage and subthreshold swing, of deuterated amorphous silicon thin film transistor can be indeed improved as compared to the hydrogenated ones. This result is consistent with the improvement of the light-induced degradation in deuterated amorphous silicon films and this improvement can be explained by the efficient coupling between Si-D wagging mode and amorphous silicon phonon mode.
SDGs
Type
journal article
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