Spin polarization in GaAs and microwave-modulated transport in GaN
Date Issued
2004
Date
2004
Author(s)
Lin, Ming-Gu
DOI
en-US
Abstract
This dissertation describes the measurements on the spin polarization in GaAs and microwave-modulated transport in GaN electron systems. This dissertation consists of the following two parts.
1.Mobility dependence on carrier density in a dilute GaAs electron gas in an in-plane magnetic field
I report low-temperature magnetoresistivity measurements of a high-quality gated two-dimensional electron gas (2DEG). In the dilute electron density limit, we show evidence for spin polarization in an in-plane magnetic field. Using a simple model, we estimate the Landé g-factor in this dilute 2DEG to be about 3.32. This enhanced Landé g-factor compared with that of a bulk GaAs 2D electron system (0.44) is ascribed to electron-electron interaction effects at ultra-low electron densities and the fact that over the whole measurement range rs does not vary significantly. Moreover, we report the mobility μ dependence on electron density n of a dilute electron gas at different in-plane magnetic fields. It is found that exponent
Subjects
砷化鎵
微波調制
氮化鎵
自旋極化
GaAs
spin polarization
microwave-modulated
GaN
Type
thesis
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