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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
InAs/GaAs quantum dot infrared photodetector (QDIP) with double Al <inf>0.3</inf> Ga <inf>0.7</inf> As blocking barriers
Details
InAs/GaAs quantum dot infrared photodetector (QDIP) with double Al 0.3 Ga 0.7 As blocking barriers
Journal
IEEE Transactions on Electron Devices
Journal Volume
49
Journal Issue
8
Pages
1341-1347
Date Issued
2002
Author(s)
Tang, S.-F.
Lin, S.-Y.
SI-CHEN LEE
DOI
10.1109/TED.2002.801441
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/498854
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-0036684682&doi=10.1109%2fTED.2002.801441&partnerID=40&md5=9dfe269759eddcf8fd966119895d1d3b
Type
journal article