High-Performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying Barrier-Type Indium Electrodes
Journal
ACS Applied Materials and Interfaces
Journal Volume
10
Journal Issue
39
Pages
33450-33456
Date Issued
2018
Author(s)
Huang Y.-T.
Chen Y.-H.
Ho Y.-J.
Huang S.-W.
Chang Y.-R.
Watanabe K.
Taniguchi T.
Chiu H.-C.
Liang C.-T.
Sankar R.
Chou F.-C.
Chen C.-W.
Abstract
/V·s is achieved with the two-terminal In-InSe FEDs at T = 2 K and room temperature, respectively, which can be attributed to enhanced quality of both conduction channel and the contacts. The improvement in the contact quality is further proven by an X-ray photoelectron spectroscopy study, which suggests that a reduction effect occurs at the In-InSe interface. The demonstration of high-performance In-InSe FEDs indicates a viable interface engineering method for next-generation, 2D semiconductor-based electronics.
SDGs
Publisher
American Chemical Society
Type
journal article