A pplication of soft landing to the process control of chemical mechanical polishing
Resource
Microelectronic Engineering 65(2003), 345–356
Journal
Microelectronic Engineering 65(2003), 345–356
Pages
-
Date Issued
2003
Date
2003
Author(s)
Chiu, Jian-Bin
Yu, Cheng-Ching
Shen, Shih-Haur
DOI
246246/2006111501244184
Abstract
In chemical mechanical polishing (CMP), a two-stage polishing strategy is often employed. A high removal
rate (RR) is set at the initial stage, then a lower RR is employed to remove residual metal and extended to the
over-polish stage. An analogy between the soft landing of a spacecraft and CMP operation is established and the
CMP operation can be viewed as a minimum-time optimal control problem. Measurement uncertainties prevent
direct implementation of bang-bang control law for the entire polishing process. Thus, a two-stage CMP
operation procedure is devised to ensure robust operation while maintaining a high throughput.
Subjects
soft landing
minimum time problem
chemical mechanical polishing
damascene
STI process control
Publisher
Taipei:National Taiwan University Dept Chem Engn
Type
journal article
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