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College of Engineering / 工學院
Mechanical Engineering / 機械工程學系
The investigation of self-heating effect on Si1-xGex FinFETs with different device structures, Ge concentration, and operated voltages
Details
The investigation of self-heating effect on Si1-xGex FinFETs with different device structures, Ge concentration, and operated voltages
Journal
AIP Advances
Journal Volume
7
Pages
055105
Date Issued
2017
Author(s)
M.-H. Liao
C.-P. Hsieh
C.-C. Lee
MING-HAN LIAO
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/590712
Type
journal article
