A Comprehensive Study of Gate Inversion Current of Metal-Oxide-Silicon Tunneling diodes

Resource

IEEE Transactions on Electron Devices 48 (9): 2125-2130

Journal

IEEE Transactions on Electron Devices

Journal Volume

48

Journal Issue

9

Pages

2125-2130

Date Issued

2001

Date

2001

Author(s)

Lin, C.-H.

Hsu, B.-C.

Lee, M.H.

Liu, C.W.

URI

Type

journal article

File(s)

Name

22.pdf

Size

132.07 KB

Format

Adobe PDF

Checksum

(MD5):0d5880eb45d2d149130f723fc125050b