Influence of in situ applied stress during thermal oxidation of (111)Si on P-b interface defects
Journal
Applied Physics Letters
Journal Volume
82
Journal Issue
18
Pages
3038-3040
Date Issued
2003
Author(s)
Abstract
A discussion about the influence of in situ applied stress during thermal oxidation of Si on Pb interface defects was presented. It was found that the tensile stresses decreased the number of Pbs while the compressive stresses increased the number of Pbs. The stress-dependent differences in incorporated Pb densities and linewidths were also presented.
SDGs
Type
journal article