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College of Science / 理學院
Physics / 物理學系
Influence of in situ applied stress during thermal oxidation of (111)Si on P-b interface defects
Details
Influence of in situ applied stress during thermal oxidation of (111)Si on P-b interface defects
Journal
Applied Physics Letters
Journal Volume
82
Journal Issue
18
Pages
3038-3040
Date Issued
2003
Author(s)
Stesmans, A.
Pierreux, D.
Jaccodine, R. J.
MINN-TSONG LIN
Delph, T. J.
DOI
10.1063/1.1555277
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/443540
Type
journal article