Transfer of aligned single crystal silicon nanowires to transparent substrates
Resource
Proceedings of SPIE 7047: 70470F
Journal
Proceedings of SPIE
Journal Volume
7047
Date Issued
2008
Date
2008
Author(s)
Abstract
We demonstrate the method of transferring aligned single crystal silicon nanowires (SiNWs) to transparent substrate. The alignment of the transferred nanowires is almost identical to the original one. The density of the transferred SiNWs can achieve 3×107 nanowires/mm2. The low temperature fabrication processes are compatible for a wide range of substrates. The transmission coefficient below 10 % at a wide bandwidth, 400-1100 nm, was found in the transferred SiNWs. The high dense aligned SiNWs are promising for future photovoltaic applications.
Subjects
Aligned; Bending stress; Electroless; Low temperature; Nanowires; SEM; Silicon; Transfer; Transmission spectrum; Transparent
SDGs
Other Subjects
Electric wire; Nanostructured materials; Nanostructures; Nanotechnology; Nanowires; Photovoltaic effects; Plasma diagnostics; Powders; Silicon; Silicon wafers; Single crystals; Aligned; Bending stress; Electroless; Low temperature; SEM; Transfer; Transmission spectrum; Transparent; Substrates
Type
conference paper
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Format
Adobe PDF
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