Characteristics of amplified spontaneous emission of high indium content InGaN/GaN quantum wells with various silicon doping conditions
Journal
Physica Status Solidi C: Conferences
Journal Issue
7
Pages
2670-2673
Date Issued
2003
Author(s)
Cheng, Y.-C.
Lin, E.-C.
Feng, S.-W.
Wang, H.-C.
Yang, C.C.
Ma, K.-J.
Pan, C.-C.
Chyi, J.-I.
SDGs
Type
conference paper