Temperature-Dependent Kink Effect Model for Partially-Depleted SOI NMOS Devices
Journal
IEEE Transactions on Electron Devices
Journal Volume
46
Journal Issue
1
Pages
254-258
Date Issued
1999-01
Author(s)
S. C Lin
Abstract
This paper reports a closed-form analytical temperaturedependent kink effect model for the partially-depleted SOI NMOS devices. Based on the body-emitter voltage model, an analytical triggering Vbs formula for temperature-dependent kink effect has been obtained. According to the analytical model, at a higher operation temperature and with a lighter Ihin-lilm doping density, the onset of the kink effect occurs at a larger Vbs-© 1999 IEEE.
Other Subjects
Electric potential; Semiconductor device models; Semiconductor doping; Silicon on insulator technology; Thermal effects; Thin films; Temperature-dependent kink effects; MOS devices
Type
journal article