Bonding Characterization and Nano-indentation Study of Amorphous SiCxNy Films with and without Hydrogen Incorporation
Journal
Diamond and Related Materials
Journal Volume
10
Journal Issue
9-10
Pages
1916-1920
Date Issued
2001
Author(s)
Abstract
The hardness and effective modulus of hydrogen-containing and hydrogen-free amorphous SiCxNy films were studied by nano-indentation. Amorphous SiCxNy films with and without hydrogen were deposited by electron cyclotron resonance plasma chemical vapor deposition (ECR-CVD) using a SiH4-CH3NH2-N2-H2 gas mixture and hydrogen-free ion-beam sputtering deposition (IBSD), respectively. Fourier-transform infrared spectroscopy (FTIR) studies were used to investigate the bonding states of the SiCxNy materials. Si-H, C-H and N-H bonds were detected by FTIR in ECR-CVD, but not in IBSD, films. The incorporation of hydrogen led to a reduction in both the hardness and modulus of the amorphous SiCxNy films. From nano-indentation measurements, the hardness and effective modulus of the IBSD coated, hydrogen-free amorphous SiCxNy films were 27-30 and 211-258 GPa, respectively. The corresponding values for the ECR-CVD coated, hydrogen-containing amorphous SiCxNy were 22-26 and 115-144 GPa, respectively. © 2001 Elsevier Science B.V. All rights reserved.
Publisher
Elsevier B.V.
Type
journal article