Modeling of Breakdown Voltage for SOI Trench LDMOS Device Based on Conformal Mapping
Journal
IEEE Transactions on Electron Devices
Journal Volume
65
Journal Issue
3
Pages
1056-1062
Date Issued
2018
Author(s)
Abstract
An analytical model is proposed in this paper to predict the breakdown voltage (BV) of silicon-on-insulator (SOI) trench lateral double diffused metal oxide semiconductor (LDMOS) devices with N/P pillars. In this SOI trench LDMOS device, the U-shaped folded drift region is divided into four parts for simplifying the solution of Poisson's equation, where conformal mapping by the Schwarz-Christoffel (S-C) transformation is applied. As verified by the TCAD simulation results, the analytical model may predict the electric field distribution and the BV accurately. This analytical model can reveal the essence of the electric field peaks around the dielectric trench from the depletion effect of the N/P pillars. ? 1963-2012 IEEE.
Subjects
Boundary conditions; Conformal mapping; Dielectric devices; Doping (additives); Electric breakdown; Electric fields; Electric insulators; Electric potential; Mathematical models; Metallic compounds; Metals; MOS devices; Oxide semiconductors; Poisson equation; Semiconducting silicon; Semiconductor device models; Semiconductor devices; Semiconductor doping; Semiconductor insulator boundaries; Silicon on insulator technology; Transistors; Depletion effects; Drift regions; Electric field distributions; Lateral double-diffused metal oxide semiconductors; LDMOS devices; Silicon-on- insulators (SOI); TCAD simulation; U-shaped; Analytical models
Type
journal article