Detailed investigation of InSb p-channel metal-oxide-semiconductor field effect transistor prepared by photo-enhanced chemical vapor deposition
Journal
IEEE Transactions on Electron Devices
Journal Volume
42
Journal Issue
5
Pages
795-803
Date Issued
1995
Author(s)
Abstract
An InSb metal-oxide-semiconductor field effect transistor (MOSFET) with three different channel lengths 5, 15 and 30 /spl mu/m was fabricated successfully. The SiO/sub 2/ prepared by photo-enhanced chemical vapor deposition was used both as the gate insulator and the source/drain passivation layer to reduce the source/drain pn junction surface leakage current. The common-source current-voltage characteristics show breakdown voltage exceeding 2 V indicating excellent pn junction reverse characteristics. The capacitance-voltage and the transferred current versus gate voltage characteristics are discussed in detail to explain the geometry effect on the device performance.>
SDGs
Type
journal article