Broadband Vertical Transitions in Multi-Layler Structure
Date Issued
2006
Date
2006
Author(s)
Huang, Wei-Ching
DOI
zh-TW
Abstract
With the demand of miniature size of microwave components for low cost products needed by nowadays microwave communication systems. Therefore, multi-layer technology is the main key to fulfill the requirements. However, the parasitic capacitance and inductance of transmission line will occur at vertical transition between layer and layer, and there are many compensated techniques had been come up in many thesis to minimize the signal degradation.
The vertical transitions between Microstrip line - Microstrip line are realized by cavity coupling and local matching techniques in this thesis. By using the local matching technique, a wideband performance can be achieved from DC to 60 GHz and DC to 10 GHz in LTCC technology and FR4 substrate, respectively.
Subjects
微帶線
垂直轉接
開槽
空腔
多層結構
mictrostrip line
vertical transitions
slot
cavity
multi-layer
Type
thesis
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