Effects of thermal annealing on InGaN/GaN quantum well structures with silicon doping
Resource
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Journal
Pacific Rim Conference on Lasers and Electro-Optics, CLEO
Journal Volume
1
Date Issued
2003
Author(s)
Cheng, Yung-Chen
Lin, En-Chiang
Feng, Shih-Wei
Wang, Hsiang-Chen
Ma, Kung-Jen
Shi, Shih-Chen
Pan, Chang-Chi
Chyi, Jen-Inn
Abstract
The effects of thermal annealing on the optical properties and material structures of InGaN/GaN quantum wells with silicon doping were studied to find that the material microstructures alternation was the major reason for the changes. © 2003 IEEE.
Other Subjects
Nanostructures; Optical properties; Photonics; Quantum well lasers; InGaN/GaN quantum well; Material microstructures; Properties and materials; Silicon doping; Thermal-annealing; Semiconductor quantum wells
Type
conference paper
File(s)![Thumbnail Image]()
Loading...
Name
01274504.pdf
Size
84.93 KB
Format
Adobe PDF
Checksum
(MD5):f91deec2f58c7cc0f7f3729ee75ae56d