A computer simulation of crystal growth by the traveling-solvent method (TSM): Pseudo-steady-state calculations

Journal

Modelling and Simulation in Materials Science and Engineering

Journal Volume

3

Journal Issue

1

Pages

71-92

Date Issued

1995

Author(s)

Lan, C.W.

Yang, D.T.

DOI

10.1088/0965-0393/3/1/007

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/444972

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-0029208865&doi=10.1088%2f0965-0393%2f3%2f1%2f007&partnerID=40&md5=825080974162c74f3307abed8f3a0e8a

Type

journal article