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College of Science / 理學院
Applied Physics / 應用物理研究所
Depth profiling the electronic structures at HfO2/Si interface grown by molecular beam epitaxy
Details
Depth profiling the electronic structures at HfO2/Si interface grown by molecular beam epitaxy
Journal
Journal of Vacuum Science & Technology B
Journal Volume
23
Journal Issue
3
Pages
1291-1293
Date Issued
2005
Author(s)
Lay, TS
Chang, SC
Din, GJ
Yeh, CC
Hung, Wei-Hsiu
Lee, WG
Kwo, J
MINGHWEI HONG
others
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/315728
Type
journal article
