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The Optical and Electrical Properties of Multi-Color Quantum Dot Infrared Photodetector
Date Issued
2004
Date
2004
Author(s)
Chen, Ying-Ying
DOI
en-US
Abstract
By capping the InAs quantum dots (QDs) with 2 nm AlGaAs layer, the 3 monolayer (ML) InAs/AlGaAs/GaAs quantum dot infrared photodetector (QDIP) exhibits multi-peaks at 5.6, 9.5, and 15.7 μm, respectively. According to the laser power dependent PL spectra, the short-wavelength peaks are responsible for the large and small QDs size distributions from the ground state to GaAs conduction band, respectively. However, the long-wavelength peak is attributed to the bound-to-bound transition from ground to first excited state of large QD. The properties of 2.2 ML InAs/AlGaAs/GaAs QDIPs are also investigated. The phenomena of high responsivity and negative differential conductance (NDC) are observed. Then, the characteristics of the QDIP clamping with Al0.3Ga0.7As and In0.17Al0.25Ga0.58As blocking barrier layers are discussed. Besides, QDIPs with two InxAlyGa1-x-yAs blocking layers are also investigated. When the In composition increases, the blocking barriers would be lower. The purpose is to decrease the dark current without affecting photocurrent.
Subjects
量子點紅外線偵測器
量子點
多波段
Multi-Color
Quantum Dot Infrared Photodetector
Quantum Dot
Type
thesis
File(s)
No Thumbnail Available
Name
ntu-93-R91943027-1.pdf
Size
23.31 KB
Format
Adobe PDF
Checksum
(MD5):26ea7b2d975dbc7f75293e505b998d9f