An Efficient and Linear 24.4dBm Ka-Band GaAs Power Amplifier for 5G Communication
Journal
2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021
Date Issued
2021
Author(s)
Abstract
A linear and highly efficient Ka-band power amplifier (PA) for the fifth generation mobile network (5G) application is realized on a 0.15-μm Gallium Arsenide (GaAs) D-mode pseudomorphic high electron mobility transistor (p-HEMT) process. A peak power added efficiency (PAEmax) of 43.4%, with peak gain of 21.2dB and saturated output power (Psat) of 24.4dBm is recorded at 27 GHz in measurement. The PA provides a higher than 36.7% PAEmax with above 20dB gain and 23.8dBm Psat across the frequency range of 25 to 31GHz. The two-stage PA also achieves an up to 21.5% average PAE (PAEavg) for a-30.5dB rms error vector magnitude (EVM) at 64-Quadrature amplitude modulation (64-QAM) with 100MHz of channel bandwidth (BW). ? 2021 IEEE.
Subjects
5G
GaAs
Ka-band.
linear
millimeter wave
PAE
Power Amplifier
5G mobile communication systems
Gallium arsenide
High electron mobility transistors
III-V semiconductors
Power amplifiers
Semiconducting gallium
High electron-mobility transistors
Ka band
Ka-band power amplifier
Linear
Peak gain
Peak power
Power-added-efficiency
Transistor process
Millimeter waves
SDGs
Type
conference paper