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  4. Various digital memory behaviors of functional aromatic polyimides based on electron donor and acceptor substituted triphenylamines
 
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Various digital memory behaviors of functional aromatic polyimides based on electron donor and acceptor substituted triphenylamines

Journal
Macromolecules
Journal Volume
45
Journal Issue
9
Pages
3749-3758
Date Issued
2012
Author(s)
Ko, Y.-G.
Kwon, W.
Yen, H.-J.
Chang, C.-W.
Kim, D.M.
Kim, K.
Hahm, S.G.
Lee, T.J.
GUEY-SHENG LIOU  
Ree, M.
DOI
10.1021/ma300311d
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-84860740028&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/369736
Abstract
A series of aromatic polyimides (PIs) were synthesized via the polymerization of 3,3′,4,4′-diphenylsulfonyltetracarboxylic dianhydride with 4,4′-diaminotriphenylamine derivatives containing hydrogen, cyano, methoxy, or dimethylamine substituents. These PIs were thermally and dimensionally stable and produced high-quality thin films when applied in a conventional spin-coating process. Their structure and properties were characterized. Nanoscale thin films of the PIs demonstrated excellent electrical memory performance, with high stabilities and ON/OFF current ratios. The memory characteristics were found to be tunable by varying the substituents; nonvolatile write-once–read-many-times memory behavior, nonvolatile ON/OFF switching type memory behavior, and volatile dynamic random access memory behavior were observed. The memory characteristics were substantially influenced by the electron-accepting cyano- and electron-donating dimethylamine substituents but were apparently not affected by the electron-donating methoxy substituent. In addition, the film density was a significant factor influencing the observed memory behaviors, with larger film densities causing lower OFF-current levels. However, the critical switching-on voltage varied very little as the substituents were changed and was measured to be approximately ±2 V. All of the memory behaviors were found to be governed by a mechanism involving trap-limited space-charge-limited conduction and local filament formation. Overall, all of the PIs assessed in the present work were found to be suitable active materials for the low-cost mass production of high-performance, programmable unipolar memory devices that can be operated with very low power consumption, high ON/OFF current ratios, and high thermal and dimensional stability.
SDGs

[SDGs]SDG7

Type
journal article

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