Low temperature polycrystalline silicon TFTs on polyimide and glass substrates
Journal
IEEE Conference on Electron Devices and Solid-State Circuits 2007
Pages
519-522
Date Issued
2007
Author(s)
Abstract
This paper presents results on low temperature poly-silicon thin film transistors (TFTs) prepared by KrF excimer laser annealing of hydrogenated amorphous silicon (a-Si:H) on polyimide and glass substrate. Two step laser annealing is used in dehydrogenation and crystallization of the a-Si:H into poly-Si on polyimide substrate. From the Raman spectrum, it is found that the crystallinity of the poly-Si on the polyimide substrate is better than that on the glass. The fabricated poly-Si TFT on polyimide shows a very good performance with field effect mobility of 370 cm 2 /V-sec and on/off current ratio > 10 6 .
Type
conference paper