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College of Science / 理學院
Applied Physics / 應用物理研究所
Very low voltage SiO2/HfON/HfAlO/TaN memory with fast speed and good retention
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Very low voltage SiO2/HfON/HfAlO/TaN memory with fast speed and good retention
Journal
Symposia on VLSI
Pages
54-55
Date Issued
2006
Author(s)
Lai, CH
Chin, Albert
Kao, HL
Chen, KM
MINGHWEI HONG
Kwo, J
Chi, CC
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/323257
Type
journal article