Characteristics of Zr-Doped ZnO Thin Films Grown by Atomic Layer Deposition
Resource
Journal of The Electrochemical Society, 158(6), D395-D398
Journal
Journal of The Electrochemical Society
Journal Volume
158
Journal Issue
6
Pages
-
Date Issued
2011
Date
2011
Author(s)
Abstract
In the study, we present the electrical and optical properties of zirconium-doped zinc oxide (ZnO:Zr) thin films grown by atomic layer deposition (ALD) on sapphire substrates. The ZnO:Zr films exhibited low resistivity (1.3 10-3 cm), high carrier concentration (2.2 × 1020 cm-3), and high transparency ( >92) in the visible spectrum. The photoluminescence spectra consisted of a strong spontaneous emission at 380 nm associated with the near-band-edge emission and a weak defect-related band. Optically-pumped stimulated emission in ZnO:Zr films was achieved with a low threshold intensity of 105 kW/cm2 at room temperature. The results indicate that the ZnO:Zr films prepared by ALD are applicable to transparent conductive oxide and ultraviolet light-emitting materials. © 2011 The Electrochemical Society.
Type
journal article