Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings
Resource
Proceedings of International Electronic Devices and Materials Symposium, p.11.53.216-11.53.219
Journal
Proceedings of International Electronic Devices and Materials Symposium
Pages
-
Date Issued
1994
Date
1994
Author(s)
Type
conference paper