Surface-Atom Core-Level Shift in GaAs(111)A-2x2
Resource
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 81(6), 064603
Journal
Journal of the Physical Society of Japan
Journal Volume
81
Journal Issue
6
Pages
-
Date Issued
2012
Date
2012
Author(s)
Pi, Tun-Wen
Chen, Bor-Rong
Huang, Mao-Lin
Chiang, Tsung-Hung
Wertheim, Gunther K.
Abstract
Guided by the known reconstruction of the GaAs(111)A-2×2 surface, the Ga 3d electron surface atom core-level shifts was found to be 0.30±0.01 eV and that of the surface As atoms with three-fold Ga coordination -0.25±0.01 eV. The four-fold coordinated As surface atoms were not resolved from the bulk line. Measureable surface effects are confined to the outermost mixed Ga and As layer. The effective spin–orbit ratios are typically below the standard value of 2/3 at kinetic energies near threshold. This phenomenon is related to final state of the excited photo-electron. The inelastic mean-free path was found to average 4 Å with a minimum near a kinetic energy of 80 eV.
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Type
journal article
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